mid-infrared : LEDs

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GaSb-based LEDs

LEDs for 1.6-2.4 µm spectral range are fabricated from narrow band-gap GaInAsSb/AlGaAsSb-based heterostructures lattice matched to GaSb substrate.

✔ Maximum operating current at quasi-CW mode is 250 mA;

✔ Maximum operating current at pulse mode is 2 000 mA;

✔ Switching time is 30-50 ns;

*1 Repetition rate: 0.5 kHz, pulse duration: 1 ms, duty cycle: 50%, current: 200 mA

*2 Repetition rate: 0.5 kHz, pulse duration: 20 µs, duty cycle: 1%, current: 1 A

InAs-based LEDs

Light Emitting Diodes for 2800-5000 nm spectral range are fabricated from narrow band-gap InAsSb/InAsSbP-based heterostructures lattice-matched to InAs substrate.

✔ Maximum operating current at quasi-CW mode is 250 mA;

✔ Maximum operating current at pulse mode is 2 000 mA;

✔ Switching time is 30-50 ns;

*1 Repetition rate: 0.5 kHz, pulse duration: 1 ms, duty cycle: 50%, current: 200 mA

*2 Repetition rate: 0.5 kHz, pulse duration: 20 µs, duty cycle: 1%, current: 1 A